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Same model may have multiple batches, images only for reference.
RJK0601DPN-E0#T2 Real Image
Same model may have multiple batches, images only for reference.

RJK0601DPN-E0#T2

Part No RJK0601DPN-E0#T2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 110A TO220
Datasheet
RJK0601DPN-E0#T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 110A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 141nC @ 10V
Max Input Capacitance 10000pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 3.1 mOhm @ 55A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1092282-RJK0601DPN-E0#T2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RJK0601DPN-E0#T2 CAD Model

Description

The Renesas Electronics America RJK0601DPN-E0#T2 is an N-Channel MOSFET with a maximum power dissipation of 200W (Tc).

  • Maximum Power Dissipation: 200W (Tc)
  • Package: TO-220AB case
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 110A (Ta)
  • Maximum Rds On @ Id,Vgs: 3.1 mOhm @ 55A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Maximum Operating Temperature: 150°C (TJ)
  • Category: Discrete Semiconductor Product
  • Status: obsolete (EOL)
  • Supply and Demand Status: sufficient

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