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Same model may have multiple batches, images only for reference.
RJK1001DPN-E0#T2 Real Image
Same model may have multiple batches, images only for reference.

RJK1001DPN-E0#T2

Part No RJK1001DPN-E0#T2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Ta)
Rds On (Max) @ Id, Vgs 5.5mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 10 pF @ 10 V
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 891770-RJK1001DPN-E0#T2
Ultra Librarian 3D Model Ultra Librarian RJK1001DPN-E0#T2 CAD Model

Description

The RJK1001DPN-E0#T2 is a single MOSFET transistor from Renesas Electronics America.

  • Category: Discrete Semiconductor Products
  • Package: Tube
  • Sold Individually: Yes
  • Standard Package: 1 piece
  • Drain to Source Voltage (Vdss): 100 V
  • Continuous Drain Current (Id): 80A @ 25°C
  • On-Resistance (Rds On): 5.5mOhm
  • Gate Charge (Qg): 147 nC
  • ECCN: EAR99
  • HTSUS: 8541.29.0095
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $45.8789 $91.7578
4+ $37.6438 $150.5752
5+ $36.4680 $182.3400
7+ $35.2910 $247.0370
9+ $34.1152 $307.0368
12+ $30.5856 $367.0272
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,220 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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