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Same model may have multiple batches, images only for reference.
RJK1054DPB-00-J5 Real Image
Same model may have multiple batches, images only for reference.

RJK1054DPB-00-J5

Part No RJK1054DPB-00-J5
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 100V 20A 5-Pin(4+Tab) LFPAK T/R / MOSFET N-CH 100V LFPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 27nC @ 10V
Max Input Capacitance 2000pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 55W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK
Dimension SC-100, SOT-669
Win Source Part Number 183115-RJK1054DPB-00-J5
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name RJK1054DPB-00
Introduction Date December 17, 2009
ECCN EAR99
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian RJK1054DPB-00-J5 CAD Model

Description

The Renesas Electronics America MOSFET is a high-quality discrete semiconductor product that is perfect for various applications. It is designed to provide excellent power dissipation and is ideal for use in various electronic devices.

  • Manufacturer: Renesas Electronics America
  • Win Source Part Number: 183115-RJK1054DPB-00-J5
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 20A (Ta)
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 10A, 10V

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Quantity Unit Price Ext. Price
50+ $1.1862 $59.3100
120+ $0.9737 $116.8440
185+ $0.9425 $174.3625
255+ $0.9125 $232.6875
330+ $0.8824 $291.1920
440+ $0.7912 $348.1280
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Availability: 16,000 pieces
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