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Same model may have multiple batches, images only for reference.
RJK2009DPM-00#T0 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJK2009DPM-00#T0

Part No RJK2009DPM-00#T0
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 40A TO3PFM
Datasheet
RJK2009DPM-00#T0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 72nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 20A, 10V
Mounting Through Hole
Case / Package TO-3PFM
Dimension TO-3PFM, SC-93-3
Win Source Part Number 1092294-RJK2009DPM-00#T0
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJK2009DPM-00#T0 CAD Model

Description

The Renesas Electronics America RJK2009DPM-00#T0 MOSFET is a high-performance N-Channel transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 40A
  • Mounting Type: Through Hole
  • Maximum Gate Charge @ Vgs: 72nC @ 10V
  • Maximum Input Capacitance @ Vds: 2900pF @ 25V
  • Maximum Rds On @ Id, Vgs: 36 mOhm @ 20A, 10V
  • Package: TO-3PFM, SC-93-3
  • Maximum Power Dissipation: 60W (Tc)
  • Operating Temperature: -40°C to 150°C (TJ)
  • Lifecycle Status: Active

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4+ $34.5680 $138.2720
6+ $33.4881 $200.9286
8+ $32.4070 $259.2560
10+ $31.3271 $313.2710
13+ $28.0861 $365.1193
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