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Same model may have multiple batches, images only for reference.
RJK2508DPK-00#T0 Real Image
Same model may have multiple batches, images only for reference.

RJK2508DPK-00#T0

Part No RJK2508DPK-00#T0
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 50A TO3P / Trans MOSFET N-CH Si 250V 50A 3-Pin(3+Tab) TO-3P Tube
Datasheet
RJK2508DPK-00#T0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 250V
Current - Continuous Drain (Id) @ 25°C 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate Charge (Qg) (Maximum) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2600pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 150W (Tc)
Rds On (Maximum) @ Id, Vgs 64 mOhm @ 25A, 10V
Mounting Style Through Hole
Manufacturer Package TO-3P
Package TO-3P-3, SC-65-3
Win Source Part Number 793226-RJK2508DPK-00#T0
Popularity Medium
Supply and Demand Status Limited
Family Name RJK2508DPK
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian RJK2508DPK-00#T0 CAD Model

Description

The RJK2508DPK-00#T0 from Renesas Electronics America is a MOSFET technology-based semiconductor product.

  • Channel Type: N
  • Drain Source Voltage: 250V
  • Maximum Continuous Drain Current: 50A (Ta)
  • Power Dissipation (Maximum): 150W (Tc)
  • Input Capacitance (Ciss): 2600pF @ 25V
  • Gate Charge (Qg): 60nC @ 10V
  • Mounting Style: through-hole
  • Package: TO-3P-3, SC-65-3
  • Drive Voltage: 10V
  • Maximum Gate-Source Voltage (Vgs): ±30V

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