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Same model may have multiple batches, images only for reference.
RJK5030DPD-00#J2 Real Image
Same model may have multiple batches, images only for reference.

RJK5030DPD-00#J2

Part No RJK5030DPD-00#J2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A MP3A
Datasheet
RJK5030DPD-00#J2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Input Capacitance 550pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 41.7W (Tc)
Maximum Rds On at Id,Vgs 1.6 Ohm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package MP-3A
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1092308-RJK5030DPD-00#J2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJK5030DPD-00#J2 CAD Model

Description

The Renesas Electronics America RJK5030DPD-00#J2 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 500V and a continuous drain current of 5A at 25°C.

  • Manufacturer: Renesas Electronics America
  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 5A
  • Maximum Power Dissipation: 41.7W
  • Maximum Input Capacitance @ 25V: 550pF
  • Temperature Range: Up to 150°C
  • Case: MP-3A
  • Packaging: Reel

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