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Same model may have multiple batches, images only for reference.
PUMZ2,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PUMZ2,115

Part No PUMZ2,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 50V 0.15A 6TSSOP
Datasheet
PUMZ2,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 250mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 1mA, 6V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz, 190MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP, SC-88
Win Source Part Number 1090736-PUMZ2,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PUMZ2,115 CAD Model

Description

The Nexperia USA Inc. PUMZ2,115 is a NPN and PNP bipolar transistor, ideal for use in discrete semiconductor products.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 150mA
  • Typical Gain (hFE): 120 @ 1mA and 6V
  • Maximum Power Dissipation: 300mW
  • Collector Cut-Off Current (max): 100nA (ICBO)
  • Package: 6-TSSOP, SC-88
  • Temperature Range: 150°C (TJ)

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Quantity Unit Price Ext. Price
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425+ $0.2353 $100.0025
660+ $0.2279 $150.4140
910+ $0.2206 $200.7460
1,175+ $0.2132 $250.5100
1,570+ $0.1912 $300.1840
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