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Same model may have multiple batches, images only for reference.
RJK6006DPD-00#J2 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJK6006DPD-00#J2

Part No RJK6006DPD-00#J2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 5A MP3A / Trans MOSFET N-CH Si 600V 5A 3-Pin(2+Tab) MP-3A T/R
Datasheet
RJK6006DPD-00#J2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate Charge (Qg) (Maximum) @ Vgs 19nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 600pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 77.6W (Tc)
Rds On (Maximum) @ Id, Vgs 1.6 Ohm @ 2.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package MP-3A
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 793230-RJK6006DPD-00#J2
Popularity Medium
Supply and Demand Status Limited
Family Name RJK6006DPD-00
Introduction Date June 03, 2010
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian RJK6006DPD-00#J2 CAD Model

Description

The RJK6006DPD-00#J2 from Renesas Electronics America MOSFET is a super junction technology device that has a drain-source voltage of 600V.

  • Continuous Drain Current: 5A (Ta)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting Style: SMD
  • Drive Voltage: 10V
  • Gate Charge: 19nC @ 10V
  • Input Capacitance: 600pF @ 25V
  • Power Dissipation: 77.6W (Tc)
  • Rds On: 1.6 Ohm @ 2.5A, 10V
  • Family: RJK6006DPD-00
  • Application: discrete semiconductor products
  • Estimated EOL Date: 2022

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