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RJP6065DPP-90T2

Part No RJP6065DPP-90T2
Manufacturer Renesas Electronics America
Catalog HOT - SALES and EOL Components (Q - R)
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Manufacturer Renesas Electronics America
Win Source Part Number 295495-RJP6065DPP-90T2
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJP6065DPP-90T2 CAD Model

Description

The RJP6065DPP-90T2 is an insulated gate bipolar transistor (IGBT) manufactured by Renesas Electronics America. This IGBT is designed for high-efficiency and high-speed switching applications. By combining the characteristics of both MOSFETs and bipolar transistors, it offers high input impedance and low on-state voltage drop, making it ideal for use in power electronics systems where efficiency and control are crucial.

Applications

  • Power Inverters
  • Uninterruptible Power Supplies (UPS)
  • Motor control systems
  • Induction Heating
  • Welding Machines

Features

  • High-speed switching capability
  • Low saturation voltage
  • High input impedance
  • Enhancement-mode operation
  • Short circuit ruggedness

Benefits

  • Increased system efficiency through reduced switching and conduction losses
  • Simplified gate drive circuitry due to the high input impedance
  • Enhanced reliability in harsh environments with its robust design
  • Lower overall system cost due to reduced component count and heat sink requirements
  • Optimized for use in high-frequency switching applications

Additional Details

The RJP6065DPP-90T2 typically features a collector-emitter voltage (VCE) rating of 600V and a collector current (IC) rating in the range of 20-40A, depending on specific operating conditions and temperature. The gate-emitter voltage (VGE) is typically rated at ±20V. Its low saturation voltage (VCE(sat)) plays a critical role in reducing power dissipation during conduction. Fast switching speed minimizes energy losses during switching transitions. The device usually comes in a TO-220 or a similar through-hole package, simplifying mounting and thermal management. The use of proper gate drive techniques is essential to harness the full performance potential of the RJP6065DPP-90T2. This includes utilizing an appropriate gate resistor to control the switching speed and mitigate oscillations. Minimizing parasitic inductance is also crucial, which can be achieved by optimizing the layout and selecting suitable components. The manufacturer's datasheet should be consulted for comprehensive specifications and application guidelines. It contains all the essential information needed for effectively integrating the RJP6065DPP-90T2 into diverse power electronic circuits.

The '-90T2' suffix might indicate a particular packaging variation or testing standard applied by Renesas. Consult the datasheet for exact specifications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3063 $58.7835
110+ $1.0718 $117.8980
170+ $1.0383 $176.5110
230+ $1.0049 $231.1270
300+ $0.9714 $291.4200
400+ $0.8709 $348.3600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,050 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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