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Same model may have multiple batches, images only for reference.
UPA1728G-E1-AT Renesas Electronics America
Same model may have multiple batches, images only for reference.

UPA1728G-E1-AT

Part No UPA1728G-E1-AT
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET  /  N-Channel 60 V 9A (Ta) Surface Mount 8-PSOP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Rds On (Max) @ Id, Vgs 26mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 10 V
Mounting SMD (SMT)
Supplier Device Package 8-PSOP
Package / Case 8-SOIC (0.173", 4.40mm Width)
RoHS Status Not applicable
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Other Names RENRNSUPA1728G-E1-AT,2156-UPA1728G-E1-AT
Standard Package 1
Win Source Part Number 1102411-UPA1728G-E1-AT
Ultra Librarian 3D Model Ultra Librarian UPA1728G-E1-AT CAD Model

Description

The Renesas Electronics America Inc 1102411-UPA1728G-E1-AT is an N-channel MOSFET transistor that features a drain to source voltage (Vdss) of 60 V and a current - continuous drain (Id) of 9A (Ta) @ 25°C.

  • On-resistance: 26mOhm @ 4.5A and 10V
  • Gate charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
  • Package: 8-SOIC (0.173", 4.40mm Width) package
  • Mounting: SMD (SMT) mounting technology.

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Quantity Unit Price Ext. Price
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56+ $2.0677 $115.7912
87+ $2.0030 $174.2610
120+ $1.9385 $232.6200
155+ $1.8738 $290.4390
207+ $1.6800 $347.7600
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