UPA2800T1L-E1-AY

Part No UPA2800T1L-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 17A 8DFN / N-Channel 30 V 17A (Ta) Surface Mount 8-DFN3333 (3.3x3.3)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Renesas Electronics America
Series -
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta)
Rds On (Max) @ Id, Vgs 7.3mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 15 V
FET Feature -
Mounting Type Surface Mount
Supplier Device Package 8-DFN3333 (3.3x3.3)
Package / Case 8-VDFN Exposed Pad
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 369 pcs
Win Source Part Number 1383796-UPA2800T1L-E1-AY

Description

The UPA2800T1L-E1-AY is a N-Channel MOSFET transistor from Renesas Electronics America. It is designed for use in discrete semiconductor products, specifically in FETs and MOSFETs. This MOSFET features a drain to source voltage (Vdss) of 30V and a continuous drain current (Id) of 17A at 25°C. With a maximum Rds On of 7.3mOhm at 17A and 10V, this transistor offers low resistance and high efficiency. The gate charge (Qg) is 17nC at 5V, and the input capacitance (Ciss) is 1770pF at 15V. The UPA2800T1L-E1-AY is surface mountable and comes in an 8-VDFN exposed pad package. It is an obsolete product with a standard package of 369 pcs. This MOSFET is suitable for various applications in electronic devices and circuits.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
45+ $1.1997 $53.9865
105+ $0.9844 $103.3620
160+ $0.9537 $152.5920
220+ $0.9229 $203.0380
285+ $0.8921 $254.2485
380+ $0.7998 $303.9240
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 900 pieces
MOQ: 45 pcs
Order Increment : 0 pcs
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