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Same model may have multiple batches, images only for reference.
UPA2800T1L-E1-AY
Same model may have multiple batches, images only for reference.

UPA2800T1L-E1-AY

Part No UPA2800T1L-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 17A 8DFN / N-Channel 30 V 17A (Ta) Surface Mount 8-DFN3333 (3.3x3.3)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Renesas Electronics America
Series -
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta)
Rds On (Max) @ Id, Vgs 7.3mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 15 V
FET Feature -
Mounting Type Surface Mount
Supplier Device Package 8-DFN3333 (3.3x3.3)
Package / Case 8-VDFN Exposed Pad
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 369 pcs
Win Source Part Number 1383796-UPA2800T1L-E1-AY
Ultra Librarian 3D Model Ultra Librarian UPA2800T1L-E1-AY CAD Model

Description

The UPA2800T1L-E1-AY is a N-Channel MOSFET transistor from Renesas Electronics America.

  • Category: Discrete Semiconductor Products
  • Type: FETs, MOSFETs
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 17A @ 25°C
  • Rds On (Max): 7.3mOhm @ 17A and 10V
  • Gate Charge (Qg): 17nC @ 5V
  • Input Capacitance (Ciss): 1770pF @ 15V
  • Mounting Type: Surface Mountable
  • Package: 8-VDFN exposed pad
  • Status: Obsolete
  • Standard Package: 369 pcs

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