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2SB1189T100R

Part No 2SB1189T100R
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 80V 0.7A SOT-89
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity PNP
Maximum Current Collector 700mA
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 400mV @ 50mA, 500mA
Collector Cut-off Current(Max) 500nA (ICBO)
Typical Gain (hFE) (Min) 180 @ 100mA, 3V
Maximum Power Dissipation 2W
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package MPT3
Win Source Part Number 101268-2SB1189T100R
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SB1189T100R CAD Model

Description

2SB1189T100R Transistor

The 2SB1189T100R is a high-performance PNP bipolar junction transistor (BJT) ideal for amplification and switching applications. With its compact design, it ensures efficiency and reliability in various electronic circuits.

Features and Benefits

  • High collector current capacity, ideal for diverse electronic projects.
  • Low saturation voltage for energy-efficient operation.
  • Excellent gain characteristics suitable for signal amplification.

Applications

  • Audio Amplifiers
  • Signal Processing Circuits
  • Switching Circuits
  • Power Management Systems

Additional Details: The 2SB1189T100R is highly respected for its thermal stability and rugged performance, making it a preferred choice among circuit designers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
325+ $0.1539 $50.0175
695+ $0.1442 $100.2190
1,080+ $0.1393 $150.4440
1,545+ $0.1296 $200.2320
2,005+ $0.1247 $250.0235
2,505+ $0.1198 $300.0990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 325 pcs
Order Increment : 1 pcs
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