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2SD1760S-R

Part No 2SD1760S-R
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Rohm Semiconductor
Win Source Part Number 157838-2SD1760S-R
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SD1760S-R CAD Model

Description

2SD1760S-R: Advanced NPN Silicon Transistor

The 2SD1760S-R is a high-performance NPN silicon transistor designed for a wide range of electronic applications. Known for its outstanding reliability and efficiency, this transistor is suitable for use in various electronic circuits, offering excellent current handling capabilities and switching speed.

Features and Benefits

  • High Current Gain: With a high DC current gain (hFE), the 2SD1760S-R provides reliable amplification, making it ideal for signal amplification in audio and RF circuits.
  • Quick Switching Speed: The fast switching capabilities improve the performance of circuits, particularly in digital and high-frequency applications.
  • Robust Design: Built with durability in mind, ensuring a longer lifespan even in demanding conditions.
  • Compact Package: The small form factor allows for integration into compact designs, facilitating the development of modern, space-efficient electronics.
  • Thermal Stability: Excellent heat dissipation characteristics enable reliable operation under varied environmental conditions.

Applications and Projects

  • Audio Power Amplifiers
  • Signal Amplification and Processing
  • Switching Circuits in Power Supplies
  • RF Amplification and Modulation Circuits
  • Motor Control and Drives

The 2SD1760S-R serves as a versatile component fit for modern electronic designs demanding reliability and efficiency. Whether used in audio equipment for enhanced sound quality or in RF applications where rapid response is critical, this transistor provides dependable performance. Additionally, the compact package allows for seamless integration into space-constrained applications, supporting the trend toward miniaturization in electronic design.

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