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Same model may have multiple batches, images only for reference.
DTB123ESTP Real Image
Same model may have multiple batches, images only for reference.

DTB123ESTP

Part No DTB123ESTP
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 300MW SPT
Datasheet
DTB123ESTP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 39 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 300mW
Mounting Through Hole
Case / Package SPT
Win Source Part Number 1035556-DTB123ESTP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DTB123ESTP CAD Model

Description

The Rohm Semiconductor DTB123ESTP is a PNP pre-biased transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 500mA
  • Typical Gain (hFE): 39 @ 50mA and 5V
  • Maximum Power Dissipation: 300mW
  • Collector Cut-Off Current: 500nA
  • Package: SPT
  • Mounting: Through-Hole

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