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DTD123ES

Part No DTD123ES
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description Digital transistors (built-in resistors)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Win Source Part Number 1170388-DTD123ES
Manufacturer Homepage www.rohm.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DTD123ES CAD Model

Description

The DTD123ES is a silicon PNP epitaxial planar transistor with built-in resistors manufactured by Rohm Semiconductor. This pre-biased transistor simplifies circuit design by integrating the biasing resistors, reducing the number of external components required. It is commonly used in switching and amplification applications where a PNP transistor is needed.

Applications

  • Digital Circuits: Used as an inverter or driver in digital logic circuits where a PNP transistor is needed.
  • Switching Circuits: Suited for low-current switching applications.
  • Portable Electronics: Found in devices like mobile phones, tablets, and other battery-powered devices.
  • Interface Circuits: Can act as an interface between different voltage levels.
  • Load Switches: Used to turn on and off small loads on the high side.

Features

  • Integrated Resistors: Features built-in base and base-emitter resistors, eliminating the need for external components.
  • Compact Package: Available in small packages like SOT-346, making it suitable for space-constrained applications.
  • PNP Configuration: Uses a PNP transistor configuration.
  • Low Saturation Voltage: Provides a low saturation voltage for efficient switching.
  • High Input Resistance: Offers high input resistance through the integrated resistor.

Benefits

  • Reduced Component Count: Integrated resistors minimize the number of external components, saving board space and cost.
  • Simplified Design: Simplifies circuit design by removing the need to select and calculate resistor values.
  • Improved Reliability: Fewer components can enhance the reliability of the circuit.
  • Space Saving: The small package is beneficial for compact devices.
  • Cost-Effective: Reduces overall system cost by integrating resistors.

Additional Details

The DTD123ES typically has an input resistor (R1) of 2.2 kΩ and a resistor between base and emitter (R2) of 10 kΩ. It is designed for low-power, low-voltage applications. Key specifications include collector current (Ic), base voltage (Vbe), and collector-emitter voltage (Vce) ratings. Always refer to the datasheet for detailed electrical characteristics and operating conditions.

The SOT-346 package (or similar) is common for these transistors due to its small size and suitability for surface mounting on PCBs. It supports automated assembly processes, improving manufacturing efficiency. The DTD123ES is a valuable component for designs needing a pre-biased PNP transistor to simplify the biasing network.

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