The HP8K22 is a 2 N-channel (half bridge) FET from Rohm Semiconductor. It is suitable for use in discrete semiconductor products and operates in a temperature range of -55°C to 150°C (TJ). The package is 8-HSOP, and the maximum power dissipation is 25W. The drain-source breakdown voltage is 30V, and the continuous drain current at 25°C is 27A, 57A. The gate-source threshold voltage is 2.5V at 1mA, and the max gate charge is 16.8nC at 10V. The max input capacitance is 1080pF at 15V, and the maximum Rds on at Id,Vgs is 4.6 mOhm at 20A, 10V. The supply and demand status is limited.