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Same model may have multiple batches, images only for reference.
IMB4AT110 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

IMB4AT110

Part No IMB4AT110
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS DUAL PNP SMT6
Datasheet
IMB4AT110 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V
Max Vce (sat) 300mV @ 1mA, 10mA
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMT6
Win Source Part Number 1045382-IMB4AT110
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IMB4AT110 CAD Model

Description

This Rohm Semiconductor product has a Win Source Part Number of 1045382-IMB4AT110.

  • Manufacturer: Rohm Semiconductor
  • Win Source Part Number: 1045382-IMB4AT110
  • Type: Dual PNP Transistor
  • Frequency Transition: 250MHz
  • Polarity: Pre-Biased
  • Base Resistor: 10k Ohms
  • Mounting Technology: SMD (SMT)
  • Packaging: Reel-TR
  • Category: Discrete Semiconductor Products
  • Status: Not for New Designs
  • Case / Package: SMT6
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 300mW
  • Typical Gain (hFE) (Min): 100 @ 1mA, 5V
  • Maximum Vce (sat): 300mV @ 1mA, 10mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
590+ $0.0982 $57.9380
1,430+ $0.0809 $115.6870
2,210+ $0.0785 $173.4850
3,035+ $0.0762 $231.2670
3,970+ $0.0728 $289.0160
5,265+ $0.0658 $346.4370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 590 pcs
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