The Rohm Semiconductor IMX8T108 is a discrete semiconductor product with a high popularity rating.

• Design: not for new designs
• Maximum power dissipation: 300mW

The component is a dual NPN transistor with a maximum collector-emitter breakdown voltage of 120V. The component is mounted using surface mount technology (SMT) and has a frequency transition of 140MHz. The component has a typical gain (hFE) (Min) of 180 @ 2mA, 6V and a collector cut-off current (Max) of 500nA (ICBO). The supply and demand status of the component is currently sufficient.