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Same model may have multiple batches, images only for reference.
QS5U21TR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

QS5U21TR

Part No QS5U21TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.5A TSMT5
Datasheet
QS5U21TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 4.2nC @ 4.5V
Max Input Capacitance 325pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT5
Dimension SOT-23-5 Thin, TSOT-23-5
Win Source Part Number 027055-QS5U21TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QS5U21TR CAD Model

Description

The Rohm Semiconductor 027055-QS5U21TR is a P-Channel MOSFET with Schottky diode (isolated) feature.

  • Drain-Source Breakdown Voltage: 20V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On: 200 mOhm @ 1.5A, 4.5V
  • Continuous Drain Current: 1.5A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Max Gate Charge: 4.2nC @ 4.5V
  • Max Input Capacitance: 325pF @ 10V
  • Drive Voltage: 2.5V, 4.5V
  • Power Dissipation: 1.25W (Ta)
  • Package: SOT-23-5 Thin, TSOT-23-5
  • Operating Temperature: 150°C (TJ)
  • Suitable for: use in discrete semiconductor products

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