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Same model may have multiple batches, images only for reference.
QS5U34TR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

QS5U34TR

Part No QS5U34TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.5A TSMT5
Datasheet
QS5U34TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.3V @ 1mA
Max Gate Charge 2.5nC @ 4.5V
Max Input Capacitance 110pF @ 10V
Maximum Gate-Source Voltage ±10V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 900mW (Ta)
Maximum Rds On at Id,Vgs 180 mOhm @ 1.5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT5
Dimension SOT-23-5 Thin, TSOT-23-5
Win Source Part Number 112864-QS5U34TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QS5U34TR CAD Model

Description

Rohm Semiconductor QS5U34TR is a MOSFET technology-based electronic component with a Schottky diode (isolated) feature.

  • Manufacturer: Rohm Semiconductor
  • Polarity: N-Channel
  • Power Dissipation: 900mW (Ta)
  • Drive Voltage: 1.8V (Max Rds On) and 4.5V (Min Rds On)
  • Package: TSMT5
  • Mounting Technology: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Continuous Drain Current: 1.5A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1.3V @ 1mA
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Rds On @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
  • Product Status: currently active
  • Popularity: medium in the open market
  • Supply and Demand Status: balanced

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