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Same model may have multiple batches, images only for reference.
QS6M3TR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

QS6M3TR

Part No QS6M3TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V/20V 1.5A TSMT6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V, 20V
Continuous Drain Current at 25°C 1.5A
Maximum Rds On at Id,Vgs 230 mOhm @ 1.5A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 1mA
Max Gate Charge 1.6nC @ 4.5V
Max Input Capacitance 80pF @ 10V
Maximum Power Dissipation 1.25W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT6 (SC-95)
Win Source Part Number 027058-QS6M3TR
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QS6M3TR CAD Model

Description

The QS6M3TR N and P-Channel FET is a reliable and efficient solution for discrete semiconductor products.

  • Manufacturer: N/A
  • FET Feature: logic level gate
  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 30V, 20V
  • Continuous Drain Current @ 25°C: 1.5A
  • Gate-Source Threshold Voltage: 1.5V @ 1mA
  • Max Gate Charge: 1.6nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 230 mOhm @ 1.5A, 4.5V
  • Packaging: reel - TR
  • Mounting: SMD (SMT)
  • Temperature Range: 150°C (TJ)
  • ECCN: EAR99
  • Part Usage: common-used
  • Popularity: high

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Pricing & Ordering

Quantity Unit Price Ext. Price
235+ $0.2173 $51.0655
565+ $0.1783 $100.7395
870+ $0.1728 $150.3360
1,200+ $0.1672 $200.6400
1,550+ $0.1616 $250.4800
2,075+ $0.1449 $300.6675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 75,000 pieces
MOQ: 235 pcs
Order Increment : 1 pcs
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