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Same model may have multiple batches, images only for reference.
QS6U24TR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

QS6U24TR

Part No QS6U24TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1A TSMT6
Datasheet
QS6U24TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 1.7nC @ 5V
Max Input Capacitance 90pF @ 10V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 400 mOhm @ 1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT6 (SC-95)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 109234-QS6U24TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QS6U24TR CAD Model

Description

The Rohm Semiconductor QS6U24TR is a P-Channel MOSFET with a Schottky diode (isolated) feature.

  • Manufacturer: Rohm Semiconductor
  • Maximum Power Dissipation: 1.25W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 1A (Ta)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Rds On @ Id,Vgs: 400 mOhm @ 1A, 10V
  • Product Type: discrete semiconductor product
  • Package: TSMT6 (SC-95)
  • Mounting: SMD (SMT) technology
  • Packaging: reel - TR
  • Supply and Demand Status: balance

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