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Same model may have multiple batches, images only for reference.
QS8J12TCR Real Image
Same model may have multiple batches, images only for reference.

QS8J12TCR

Part No QS8J12TCR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 4.5A TSMT8
Datasheet
QS8J12TCR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate, 1.5V Drive
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 29 mOhm @ 4.5A, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 40nC @ 4.5V
Max Input Capacitance 4200pF @ 6V
Maximum Power Dissipation 550mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT8
Win Source Part Number 046011-QS8J12TCR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QS8J12TCR CAD Model

Description

The Rohm Semiconductor 046011-QS8J12TCR is a 2 P-Channel (Dual) FET featuring a Logic Level Gate and 1.5V Drive.

  • Product Type: Discrete Semiconductor Products
  • Case/Package: TSMT8
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 4.5A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Power Dissipation: 550mW
  • Maximum Rds On: 29 mOhm @ 4.5A, 4.5V
  • Maximum Gate Charge: 40nC @ 4.5V
  • Maximum Input Capacitance: 4200pF @ 6V
  • Market: open market
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
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460+ $0.2536 $116.6560
710+ $0.2457 $174.4470
975+ $0.2377 $231.7575
1,260+ $0.2298 $289.5480
1,685+ $0.2061 $347.2785
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