The 1201455-R6004JNJGTL is a N-channel MOSFET transistor designed for use in discrete semiconductor products, specifically in transistors that require high drain to source voltage (Vdss) of up to 600 V.

• Vdss: 600 V
• Id: 4A (Tc)
• Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
• Qg (Max) @ Vgs: 10.5 nC @ 15 V
• Ciss (Max) @ Vds: 260 pF @ 100 V
• Power Dissipation (Max): 60W (Tc)
• Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Operating Temperature: -55°C ~ 150°C (TJ)
• Manufacturer: Rohm Semiconductor
• Mounting: SMD (SMT)