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R6025ANZ

Part No R6025ANZ
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 25A TO3PF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 88nC @ 10V
Max Input Capacitance 3250pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 12.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PF
Dimension TO-3P-3 Full Pack
Win Source Part Number 042290-R6025ANZ
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian R6025ANZ CAD Model

Description

The Rohm Semiconductor R6025ANZ is a MOSFET technology-based N-channel power transistor. It has a maximum power dissipation of 150W and a continuous drain current of 25A @ 25°C.

  • Manufacturer: Rohm Semiconductor
  • Technology: MOSFET
  • Type: N-channel power transistor
  • Maximum power dissipation: 150W
  • Continuous drain current: 25A @ 25°C
  • Designed for: Use in a wide range of applications, including power supplies, motor control, and lighting systems
  • Overall: A reliable and efficient transistor that delivers high performance and low power consumption
  • Maximum gate-source voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 150 mOhm @ 12.5A and 10V

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