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Same model may have multiple batches, images only for reference.
R6520ENXC7G
Same model may have multiple batches, images only for reference.

R6520ENXC7G

Part No R6520ENXC7G
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
R6520ENXC7G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 205mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1315689-R6520ENXC7G
Ultra Librarian 3D Model Ultra Librarian R6520ENXC7G CAD Model

Description

The R6520ENXC7G is an N-channel MOSFET from Rohm Semiconductor.

  • Maximum Drain-Source Voltage: 650V
  • Maximum Continuous Drain Current: 20A @ 25°C
  • Maximum On-Resistance: 205mΩ @ 9.5A and 10V gate-source voltage
  • Gate Threshold Voltage: 4V @ 630μA
  • Gate Charge: 61nC @ 10V gate-source voltage
  • RoHS Compliant: Yes
  • Drive Voltage: 10V

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