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Same model may have multiple batches, images only for reference.
RCD100N20TL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RCD100N20TL

Part No RCD100N20TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 10A CPT3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.25V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 850mW (Ta), 20W (Tc)
Maximum Rds On at Id,Vgs 182 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CPT3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1091612-RCD100N20TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RCD100N20TL CAD Model

Description

The Rohm Semiconductor RCD100N20TL MOSFET is an N-Channel polarity electronic component that has a power dissipation of 850mW (Ta), 20W (Tc).

  • Drive Voltage: 10V
  • Temperature Range: 150°C (TJ)
  • Case/Package: CPT3
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 10A (Tc)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0376 $62.2560
140+ $0.8514 $119.1960
215+ $0.8248 $177.3320
290+ $0.7981 $231.4490
375+ $0.7715 $289.3125
505+ $0.6918 $349.3590
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Availability: 2,500 pieces
MOQ: 60 pcs
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