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Same model may have multiple batches, images only for reference.
RCX511N25 Real Image
Same model may have multiple batches, images only for reference.

RCX511N25

Part No RCX511N25
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 51A TO220FM / N-Channel 250 V 51A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Rohm Semiconductor
Packaging Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 25 V
Power Dissipation (Max) 2.23W, 40W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220FM
Case / Package TO-220-3 Full Pack
Base Product Number RCX511
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number RCX511N25CT,RCX511N25CT-ND
Standard Package 500
Win Source Part Number 1325276-RCX511N25
Ultra Librarian 3D Model Ultra Librarian RCX511N25 CAD Model

Description

The RCX511N25 from Rohm Semiconductor is an N-channel MOSFET transistor with a drain to source voltage (Vdss) of 250V and a continuous drain current (Id) of 51A (Tc) @ 25°C.

  • Maximum On-Resistance (Rds On): 65mOhm @ 25.5A, 10V
  • Maximum Gate Charge (Qg): 120 nC @ 10 V
  • RoHS Compliant: Yes
  • Case/Package: TO-220-3 full pack
  • Temperature Range: 150°C (TJ)
  • Mounting: Through-Hole

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