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RD3H160SPTL1

Part No RD3H160SPTL1
Manufacturer Rohm Semiconductor
Catalog FETs - Single
Description PCH -45V -16A POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Rohm Semiconductor
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 45V
Current - Continuous Drain (Id) at 25°C 16A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 50mOhm at 16A, 10V
Vgs(th) (Maximum) at Id 3V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 16nC at 5V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2000pF at 10V
Power Dissipation (Maximum) 20W (Tc)
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package TO-252
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806628-RD3H160SPTL1
Ultra Librarian 3D Model Ultra Librarian RD3H160SPTL1 CAD Model

Description

The RD3H160SPTL1 is a silicon epitaxial planar type hyper fast recovery diode manufactured by Rohm Semiconductor. It is designed for high-speed switching applications, offering a low forward voltage and fast reverse recovery time. The device is typically used in circuits where efficient and rapid switching is crucial for performance.

Applications:

  • Power Factor Correction (PFC) circuits: Improving the power factor of electronic devices.
  • Switching Mode Power Supplies (SMPS): Used as rectifiers in secondary stages.
  • Motor control circuits: Providing fast recovery for inductive load switching.
  • Inverters: Used in solar inverters and other power inverters.
  • Lighting applications: Efficient rectification in LED drivers and other lighting circuits.

Features:

  • Hyper Fast Recovery Time: Provides very fast switching speeds.
  • Low Forward Voltage: Minimizes power loss and heat generation.
  • High Surge Current Capability: Withstands high current surges.
  • High Reliability: Designed for robust and reliable operation.
  • Small Package Size: Compact form factor for space-constrained applications.

Benefits:

  • Improved Efficiency: Low forward voltage drop reduces power dissipation.
  • Reduced Switching Losses: Fast recovery time minimizes switching losses.
  • Enhanced System Performance: Faster switching improves the overall performance of the circuit.
  • Increased System Reliability: High surge current capability provides protection against transient events.
  • Smaller Footprint: Compact package size allows for more compact designs.

Additional Details:

The RD3H160SPTL1 features a low reverse recovery charge, contributing to its fast switching performance. The diode is designed to operate over a wide temperature range. The specific package type of RD3H160SPTL1 allows for efficient heat dissipation, enhancing the overall reliability of the device. The forward voltage and reverse recovery time are optimized to meet the demanding requirements of modern power electronic circuits. It typically comes in a surface-mount package for automated assembly.

Detailed technical specifications, such as maximum repetitive peak reverse voltage, forward current, and reverse recovery time, can be found in the Rohm Semiconductor datasheet for this part.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4930 $52.2550
85+ $1.2250 $104.1250
130+ $1.1867 $154.2710
175+ $1.1484 $200.9700
230+ $1.1102 $255.3460
305+ $0.9953 $303.5665
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Availability: 2,015 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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