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RD3U080CNTL1

Part No RD3U080CNTL1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 8A TO252  /  N-Channel 250 V 8A (Tc) 85W (Tc) Surface Mount TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 25 V
Power Dissipation (Max) 85W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number RD3U080
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names RD3U080CNTL1DKR,RD3U080CNTL1TR,RD3U080CNTL1CT
Standard Package 2,500
Win Source Part Number 1087888-RD3U080CNTL1
Ultra Librarian 3D Model Ultra Librarian RD3U080CNTL1 CAD Model

Description

The RD3U080CNTL1 is an N-channel MOSFET from Rohm Semiconductor that is suitable for use in discrete semiconductor applications.

  • Channel Type: N-channel
  • Maximum Drain to Source Voltage: 250V
  • Continuous Drain Current: 8A
  • Rds On: 300mOhm @ 4A and 10V
  • Gate Charge: 25 nC @ 10V
  • Input Capacitance: 1440 pF @ 25V
  • Maximum Gate to Source Voltage: ±30V
  • Temperature Range: -55°C to 150°C
  • Packaging: Tape and Reel

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5368 $53.7880
80+ $1.2609 $100.8720
125+ $1.2215 $152.6875
170+ $1.1821 $200.9570
220+ $1.1427 $251.3940
295+ $1.0245 $302.2275
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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