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Same model may have multiple batches, images only for reference.
RDN080N25 Real Image
Same model may have multiple batches, images only for reference.

RDN080N25

Part No RDN080N25
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 8A TO220FN
Datasheet
RDN080N25 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 543pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 500 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FN
Dimension TO-220-3 Full Pack
Win Source Part Number 046146-RDN080N25
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RDN080N25 CAD Model

Description

The TO-220FN is a N-Channel MOSFET manufactured by Rohm Semiconductor.

  • Maximum Power Dissipation: 35W (Tc)
  • Continuous Drain Current: 8A (Ta)
  • Drive Voltage: 10V
  • Mounting Type: Through-hole
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,230 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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