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Same model may have multiple batches, images only for reference.
RDN100N20FU6 Real Image
Same model may have multiple batches, images only for reference.

RDN100N20FU6

Part No RDN100N20FU6
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 10A TO-220FN
Datasheet
RDN100N20FU6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 543pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 360 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FN
Dimension TO-220-3 Full Pack
Win Source Part Number 027267-RDN100N20FU6
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RDN100N20FU6 CAD Model

Description

Rohm Semiconductor is a manufacturer of electronic components. The RDN100N20FU6 is a MOSFET technology-based N-channel polarity product.

  • Maximum Power Dissipation: 35W (Tc)
  • Status: Not for new designs
  • Supply and Demand Status: Limited
  • Operating Temperature Range: 150 degrees Celsius (TJ)
  • Packaging: TO-220FN
  • Maximum Drain-Source Breakdown Voltage: 200V
  • Maximum Rds On at Id,Vgs: 360 mOhm @ 5A, 10V

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17+ $6.8838 $117.0246
26+ $6.6690 $173.3940
36+ $6.4530 $232.3080
47+ $6.2382 $293.1954
62+ $5.5925 $346.7350
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Availability: 9,500 pieces
MOQ: 7 pcs
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