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RDN150N20

Part No RDN150N20
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Switching (200V, 15A)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Win Source Part Number 1242189-RDN150N20
Manufacturer Homepage www.rohm.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RDN150N20 CAD Model

Description

The RDN150N20 from Rohm Semiconductor is an N-channel power MOSFET designed for high-efficiency switching applications. This device is fabricated using Rohm's advanced trench MOSFET technology, which minimizes on-resistance and gate charge, leading to improved power conversion efficiency and reduced switching losses.

Applications

  • DC-DC converters
  • Motor control circuits
  • Power management systems
  • Load switches
  • LED lighting drivers

Features

  • Low On-Resistance: Reduces conduction losses, enhancing overall efficiency.
  • Fast Switching Speed: Minimizes switching losses, enabling higher frequency operation.
  • Low Gate Charge: Reduces driver power requirements and switching losses.
  • Avalanche Rated: Provides robustness against voltage transients.
  • Pb-free and RoHS Compliant: Environmentally friendly and compliant with industry standards.

Benefits

  • Increased Efficiency: The low on-resistance and fast switching speed contribute to higher efficiency in power conversion applications.
  • Reduced Power Dissipation: Lower on-resistance minimizes heat generation, improving system reliability and reducing the need for heat sinking.
  • Improved System Performance: Fast switching speed allows for higher frequency operation, enabling smaller and more efficient power supply designs.
  • Enhanced Reliability: The avalanche rating provides protection against voltage spikes, improving the overall robustness and reliability of the system.
  • Environmentally Friendly: Pb-free and RoHS compliant, meeting environmental regulations.

Technical Specifications

The RDN150N20 features a drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 15A at 25°C. The on-resistance (RDS(on)) is typically 150 mΩ at VGS = 10V. The gate charge (Qg) is typically 12 nC. It is available in a TO-252 package.

This MOSFET is well-suited for applications requiring efficient power switching and reliable performance. Its low on-resistance and fast switching speed make it an excellent choice for DC-DC converters, motor control, and other power management applications. The RDN150N20 from Rohm Semiconductor offers a combination of performance and reliability, making it a valuable component in modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6260 $59.4700
225+ $0.5140 $115.6500
350+ $0.4978 $174.2300
480+ $0.4816 $231.1680
625+ $0.4655 $290.9375
830+ $0.4181 $347.0230
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,436 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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