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RF4C050APTR

Part No RF4C050APTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 10A 8HUML
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 55nC @ 4.5V
Max Input Capacitance 5500pF @ 10V
Maximum Gate-Source Voltage -8V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 26 mOhm @ 5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-HUML2020L8 (2x2)
Dimension 8-PowerUDFN
Win Source Part Number 1092110-RF4C050APTR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RF4C050APTR CAD Model

Description

The RF4C050APTR is a P-Channel MOSFET manufactured by Rohm Semiconductor.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 10A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge: 55nC @ 4.5V
  • Maximum Rds On: 26 mOhm @ 5A, 4.5V
  • Power Dissipation: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Package: 6-HUML2020L8 (2x2)
  • Dimension: 8-PowerUDFN
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0036 $50.1800
125+ $0.8235 $102.9375
190+ $0.7977 $151.5630
260+ $0.7720 $200.7200
335+ $0.7463 $250.0105
450+ $0.6691 $301.0950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 69,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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