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Same model may have multiple batches, images only for reference.
RGTH00TS65GC11
Same model may have multiple batches, images only for reference.

RGTH00TS65GC11

Part No RGTH00TS65GC11
Manufacturer Rohm Semiconductor
Catalog IGBTs - Single
Description IGBT TRNCH FIELD 650V 85A TO247N / IGBT Trench Field Stop 650 V 85 A 277 W Through Hole TO-247N
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Rohm Semiconductor
Series -
Package Tube
Product Status Not For New Designs
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 85 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Power - Max 277 W
Switching Energy -
Input Type Standard
Gate Charge 94 nC
Td (on/off) @ 25°C 39ns/143ns
Test Condition 400V, 50A, 10Ohm, 15V
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247N
Base Product Number RGTH00
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355529-RGTH00TS65GC11
Ultra Librarian 3D Model Ultra Librarian RGTH00TS65GC11 CAD Model

Description

The RGTH00TS65GC11 is a single IGBT from Rohm Semiconductor. It is designed for use in high-power applications and operates with a collector current (Ic) of 85A and a collector-emitter breakdown voltage of 650V.

  • Collector Current (Ic): 85A
  • Collector-Emitter Breakdown Voltage: 650V
  • Gate Charge: 94nC
  • Maximum Voltage: ±30V
  • Turn-On Delay: 39ns
  • Turn-Off Delay: 143ns
  • Package: TO-247-3
  • Mounting Type: Through-Hole
  • REACH: Unaffected
  • ECCN: EAR99
  • Input: Standard
  • IGBT Type: Trench Field Stop

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