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RK7002T116

Part No RK7002T116
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 115MA SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Input Capacitance 50pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 225mW (Ta)
Maximum Rds On at Id,Vgs 7.5 Ohm @ 500mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SST3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 096769-RK7002T116
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RK7002T116 CAD Model

Description

The RK7002T116 is an N-channel MOSFET manufactured by Rohm Semiconductor, designed for low-voltage switching applications. It is commonly used in portable devices and consumer electronics due to its low on-resistance and compact size, which enables efficient power management and space-saving designs.

Applications:

  • Load Switching: Efficiently controls power to various loads within electronic systems.
  • DC-DC Converters: Used in voltage regulation and power management circuits.
  • Portable Electronics: Specifically designed for smartphones, tablets, and other battery-powered devices.
  • Power Management Systems: Used in circuits responsible for controlling power distribution and efficiency.
  • Small Motor Control: Drives small DC motors in various consumer applications.

Features:

  • N-Channel MOSFET: Provides efficient switching capability.
  • Low On-Resistance (RDS(on)): Minimizes power loss and heat generation for increased efficiency.
  • Fast Switching Speed: Allows for high-frequency operation and quick response times.
  • Compact Package: Enables space-saving designs on printed circuit boards.
  • Low Gate Threshold Voltage: Compatible with low-voltage logic circuits for simplified designs.

Benefits:

  • Enhanced Energy Efficiency: Reduced power dissipation due to low on-resistance improves overall energy efficiency.
  • Space-Saving Design: Small package allows integration into compact electronic devices.
  • Reliable Performance: Rohm Semiconductor ensures consistent and reliable operation.
  • Extended Battery Life: Minimizes power consumption, extending battery life for portable applications.
  • Simplified Circuit Integration: Low threshold voltage simplifies gate drive requirements.

Additional Details:

This MOSFET features a low gate charge, which contributes to its fast switching performance. It is designed for use with low gate-source voltages, making it compatible with modern low-voltage logic families. Commonly available in surface-mount packages, it facilitates automated assembly and high-density board layouts. Key electrical specifications include drain-source voltage rating, gate-source voltage rating, and continuous drain current capability. Refer to the device datasheet for detailed specifications and operating conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
735+ $0.0787 $57.8445
1,790+ $0.0646 $115.6340
2,770+ $0.0626 $173.4020
3,820+ $0.0605 $231.1100
4,935+ $0.0586 $289.1910
6,610+ $0.0524 $346.3640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 735 pcs
Order Increment : 1 pcs
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