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Same model may have multiple batches, images only for reference.
RP1A090ZPTR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RP1A090ZPTR

Part No RP1A090ZPTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 9A MPT6
Datasheet
RP1A090ZPTR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 59nC @ 4.5V
Max Input Capacitance 7400pF @ 6V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 9A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package MPT6
Dimension 6-SMD, Flat Leads
Win Source Part Number 046364-RP1A090ZPTR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RP1A090ZPTR CAD Model

Description

The RP1A090ZPTR from Rohm Semiconductor is a P-Channel MOSFET with a maximum power dissipation of 2W (Ta).

  • Manufacturer: Rohm Semiconductor
  • Power Dissipation: 2W (Ta)
  • Drive Voltage (max Rds On): 1.5V
  • Drive Voltage (min Rds On): 4.5V
  • Mounting: SMD (SMT)
  • Packaging: Reel
  • Category: Discrete Semiconductor Products
  • Status: Obsolete(EOL)
  • Case/Package: MPT6
  • Dimension: 6-SMD, Flat Leads
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 9A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge: 59nC @ 4.5V
  • Maximum Input Capacitance: 7400pF @ 6V
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Rds On @ Id,Vgs: 12 mOhm @ 9A, 4.5V

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190+ $0.6199 $117.7810
290+ $0.6006 $174.1740
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515+ $0.5618 $289.3270
690+ $0.5037 $347.5530
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