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Same model may have multiple batches, images only for reference.
RP1E050RPTR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RP1E050RPTR

Part No RP1E050RPTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 5A MPT6
Datasheet
RP1E050RPTR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 9.2nC @ 5V
Max Input Capacitance 850pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 50 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package MPT6
Dimension 6-SMD, Flat Leads
Win Source Part Number 106152-RP1E050RPTR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RP1E050RPTR CAD Model

Description

The Rohm Semiconductor P-Channel MOSFET is a high-performance electronic component that is designed for use in various applications.

  • Manufacturer: Rohm Semiconductor
  • Power Dissipation: 2W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Mounting: 6-SMD, flat lead package
  • Continuous Drain Current: 5A (Ta)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 9.2nC @ 5V
  • Maximum Input Capacitance: 850pF @ 10V
  • Maximum Rds On @ Id, Vgs: 50 mOhm @ 5A, 10V
  • Status: Obsolete (EOL)
  • Drive Voltage: 4V, 10V (Max Rds On, Min Rds On)
  • Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7333 $58.6640
195+ $0.6018 $117.3510
300+ $0.5830 $174.9000
410+ $0.5641 $231.2810
530+ $0.5454 $289.0620
710+ $0.4890 $347.1900
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MOQ: 80 pcs
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