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Same model may have multiple batches, images only for reference.
RQ1C075UNTR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RQ1C075UNTR

Part No RQ1C075UNTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 7.5A TSMT8
Datasheet
RQ1C075UNTR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 18nC @ 4.5V
Max Input Capacitance 1400pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 16 mOhm @ 7.5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT8
Dimension 8-SMD, Flat Lead
Win Source Part Number 097446-RQ1C075UNTR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RQ1C075UNTR CAD Model

Description

The RQ1C075UNTR is an N-channel MOSFET from Rohm Semiconductor.

  • Maximum Power Dissipation: 700mW
  • Breakdown Voltage: 20V
  • Package: surface mount package
  • Maximum Rds on: 16 mOhm @ 7.5A and 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3821 $51.5835
320+ $0.3135 $100.3200
495+ $0.3037 $150.3315
685+ $0.2939 $201.3215
880+ $0.2841 $250.0080
1,180+ $0.2548 $300.6640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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