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MRF6S9160HR3

Part No MRF6S9160HR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 880MHZ NI-780 / Trans RF MOSFET N-CH 68V 3-Pin NI-780 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 880MHz
Gain 20.9dB
Voltage - Test 28V
Current - Test 1.2A
Power - Output 35W
Voltage Rating DC 68V
Package NI-780
Manufacturer Package NI-780
Win Source Part Number 789449-MRF6S9160HR3
Popularity Medium
Supply and Demand Status Limited
Family Name MRF6S9160H
Introduction Date September 27, 2005
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF6S9160HR3 CAD Model

Description

Product Overview: MRF6S9160HR3 RF Power Transistor

The MRF6S9160HR3 is a high-performance Radio Frequency (RF) power LDMOS transistor designed and manufactured by NXP Semiconductors. This device is specifically engineered to deliver outstanding RF power and efficiency for a variety of applications, including cellular base station amplifiers, broadcast transmitters, and industrial, scientific, and medical (ISM) applications.

Key Features

  • Frequency Range: The MRF6S9160HR3 operates at a frequency range of 920-960 MHz, making it ideal for GSM and CDMA cellular bands.
  • High Output Power: It is capable of delivering a high output power of 16 W CW, ensuring robust signal amplification.
  • High Gain: The transistor provides a high gain of 18 dB, which contributes to its efficiency and the overall amplification process.
  • High Efficiency: With an efficiency of 45%, the MRF6S9160HR3 is designed for applications that require both high power and efficiency.
  • Integrated ESD Protection: The device includes integrated Electrostatic Discharge (ESD) protection for enhanced reliability and longevity.
  • Ruggedness: The transistor is rugged and can handle a high Voltage Standing Wave Ratio (VSWR), making it resilient in mismatched load conditions.
  • Thermally Enhanced Package: It comes in a NI-780 style plastic package that provides excellent thermal performance and is suitable for high-temperature operations.

Applications

The MRF6S9160HR3 is versatile and can be used in a range of RF power applications. Its primary applications include:

  • Cellular base station amplifiers for GSM and CDMA technologies.
  • Broadcast transmitters for radio and television.
  • Industrial, scientific, and medical (ISM) equipment requiring RF power.

Conclusion

With its high power, gain, efficiency, and ruggedness, the MRF6S9160HR3 from NXP Semiconductors stands out as a reliable and efficient solution for designers looking to enhance their RF power applications. Its integrated features and robust design ensure optimal performance for demanding environments, making it a preferred choice for industry professionals.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $101.5002 $101.5002
2+ $98.3275 $196.6550
3+ $95.1558 $285.4674
4+ $91.9842 $367.9368
5+ $82.4682 $412.3410
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
Order Increment : 1 pcs
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