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RQ1E075XNTCR

Part No RQ1E075XNTCR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.5A TSMT8  /  N-Channel 30 V 7.5A (Ta) 1.1W (Ta) Surface Mount TSMT8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 10 V
Power Dissipation (Max) 1.1W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TSMT8
Package / Case 8-SMD, Flat Lead
Base Product Number RQ1E075
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names RQ1E075XNTCRDKR,RQ1E075XNTCRTR,RQ1E075XNTCRCT
Standard Package 3,000
Win Source Part Number 1088917-RQ1E075XNTCR
Ultra Librarian 3D Model Ultra Librarian RQ1E075XNTCR CAD Model

Description

The Rohm Semiconductor 990634 is a MOSFET (Metal Oxide) N-Channel FET that is designed for use in discrete semiconductor products such as transistors, FETs, and MOSFETs. It has a drain to source voltage (Vdss) of 30V and a continuous drain current (Id) of 7.5A (Ta) @ 25°C.

  • Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
  • Package: 8-SMD, Flat Lead
  • Temperature Range: 150°C (TJ)

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