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RQ3E070BNFU7TB

Part No RQ3E070BNFU7TB
Manufacturer Rohm Semiconductor
Catalog OEM Parts (O - R)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 970502-RQ3E070BNFU7TB
Categories OEM Parts(O-R)
Manufacturer Rohm Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RQ3E070BNFU7TB CAD Model

Description

The RQ3E070BNFU7TB is a P-channel MOSFET from Rohm Semiconductor, designed for power management and switching applications. This MOSFET offers low on-resistance and high-speed switching, making it suitable for efficient power control in a variety of circuits.

Applications:

  • Load Switching: General-purpose load switching in electronic devices.
  • Power Management: DC-DC converters, power supplies, and battery management systems.
  • Motor Control: Low-voltage motor control applications.
  • Backlight Inverters: Driving backlight LEDs in displays.
  • Portable Devices: Smartphones, tablets, and other battery-powered electronics.

Features:

  • P-Channel MOSFET: Allows for easy gate driving with a simple voltage level.
  • Low On-Resistance (Rds(on)): Minimizes power loss and improves efficiency.
  • High-Speed Switching: Enables fast and efficient switching operation.
  • Compact Package: Small footprint for space-constrained applications.
  • Lead-Free and RoHS Compliant: Environmentally friendly construction.
  • Low Threshold Voltage: Allows for operation with low gate drive voltages.
  • Avalanche Rated: Provides robustness against voltage spikes.

Benefits:

  • High Efficiency: Low on-resistance minimizes power dissipation, leading to higher efficiency in power conversion circuits.
  • Compact Design: Small package allows for integration in space-limited applications.
  • Easy to Drive: P-channel configuration simplifies gate drive circuitry.
  • Reliable Performance: Robust design ensures stable and reliable operation.
  • Environmentally Friendly: Lead-free and RoHS compliant, minimizing environmental impact.

The RQ3E070BNFU7TB is designed with a trench MOSFET structure, which further reduces on-resistance and improves switching performance. It is also avalanche rated, meaning it can withstand transient voltage spikes without damage, enhancing system reliability. The MOSFET's low threshold voltage enables operation with low gate drive voltages, making it compatible with a wide range of control signals. The compact package is thermally efficient, allowing for effective heat dissipation and stable operation even under demanding conditions. Its combination of low on-resistance, high-speed switching, and robust design makes the RQ3E070BNFU7TB an excellent choice for a variety of power management and switching applications. Its environmentally friendly construction also makes it a sustainable choice for modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8166 $61.2450
175+ $0.6699 $117.2325
270+ $0.6491 $175.2570
370+ $0.6283 $232.4710
480+ $0.6075 $291.6000
640+ $0.5440 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,253 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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