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RQ3E070BNTB

Part No RQ3E070BNTB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7A 8HSMT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Rohm Semiconductor
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 15 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3)
Package / Case 8-PowerVDFN
Base Product Number RQ3E070
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 748815-RQ3E070BNTB
Ultra Librarian 3D Model Ultra Librarian RQ3E070BNTB CAD Model

Description

The 748815-RQ3E070BNTB is a single N-channel MOSFET transistor in the category of discrete semiconductor products manufactured by Rohm Semiconductor.

  • Series: Active
  • Packaging: Tape and Reel
  • Package Quantity: 3,000 pieces
  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 7A
  • On-Resistance: 27mOhm
  • Gate-Source Voltage: 2.5V @ 1mA
  • Package: 8-PowerVDFN
  • Gate Charge: 8.9nC @ 10V
  • Input Capacitance: 410pF @ 15V
  • ECCN: Compliant
  • REACH: Unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1656 $57.9600
855+ $0.1358 $116.1090
1,320+ $0.1317 $173.8440
1,815+ $0.1274 $231.2310
2,350+ $0.1231 $289.2850
3,140+ $0.1104 $346.6560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,820 pieces
MOQ: 350 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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