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Same model may have multiple batches, images only for reference.
RQ3E100MNTB1 Real Image
Same model may have multiple batches, images only for reference.

RQ3E100MNTB1

Part No RQ3E100MNTB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10A HSMT8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 9.9nC @ 10V
Max Input Capacitance 520pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 12.3 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSMT (3.2x3)
Dimension 8-PowerVDFN
Win Source Part Number 1092618-RQ3E100MNTB1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RQ3E100MNTB1 CAD Model

Description

The RQ3E100MNTB1 is an N-channel MOSFET manufactured by Rohm Semiconductor.

  • Power Dissipation: 2W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 10A (Ta)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 12.3 mOhm @ 10A, 10V
  • Alternative Parts: SI7112DN-T1-E3, STL12N3LLH5, and RQ3E100MNTB

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6908 $58.7180
205+ $0.5669 $116.2145
320+ $0.5492 $175.7440
435+ $0.5315 $231.2025
565+ $0.5137 $290.2405
755+ $0.4606 $347.7530
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MOQ: 85 pcs
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