The Rohm Semiconductor RQ6E035ATTCR is a P-channel MOSFET that has a maximum power dissipation of 1.25W (Ta).

• Power Dissipation: 1.25W (Ta)
• Case: TSMT6 (SC-95)
• Dimension: SOT-23-6 Thin, TSOT-23-6
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 3.5A (Ta) @ 25°C
• Gate-Source Threshold Voltage: 2.5V @ 1mA
• Maximum Gate Charge: 10nC @ 10V
• Maximum Input Capacitance: 475pF @ 15V
• Maximum Rds on @ Id,Vgs: 50 mOhm @ 3.5A, 10V
• Category: Discrete Semiconductor Product
• Status: Active
• Supply and Demand Status: Balanced