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RRH050P03TB1 Real Image1 RRH050P03TB1 Real Image2
Same model may have multiple batches, images only for reference.
RRH050P03TB1 Real Image1 RRH050P03TB1 Real Image2
RRH050P03TB1 Real Image1 RRH050P03TB1 Real Image2
Same model may have multiple batches, images only for reference.

RRH050P03TB1

Part No RRH050P03TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 5A SOP8
Datasheet
RRH050P03TB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 9.2nC @ 5V
Max Input Capacitance 850pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 650mW (Ta)
Maximum Rds On at Id,Vgs 50 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1092661-RRH050P03TB1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RRH050P03TB1 CAD Model

Description

The RRH050P03TB1 is a P-channel MOSFET that comes in an 8-SOP package from Rohm Semiconductor.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5A (Ta)
  • Maximum Rds On: 50 mOhm @ 5A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Max Gate Charge: 9.2nC @ 5V
  • Max Input Capacitance: 850pF @ 10V
  • Suitable for: Power Management, Motor Control, and Battery Protection
  • Features: Low on-resistance, High-speed switching, Excellent thermal performance
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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