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IRFS3306PBF

Part No IRFS3306PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 4520pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 083785-IRFS3306PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS3306PBF CAD Model

Description

The Infineon Technologies IRFS3306PBF is an N-Channel MOSFET that is commonly used in electronic devices.

  • Power Dissipation: 230W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Packaging: tube/rail
  • Mounting Type: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5569 $62.2760
80+ $1.4565 $116.5200
125+ $1.4068 $175.8500
180+ $1.3063 $235.1340
230+ $1.2555 $288.7650
290+ $1.2058 $349.6820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,410 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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