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Same model may have multiple batches, images only for reference.
IRFS3207PBF Real Image
Same model may have multiple batches, images only for reference.

IRFS3207PBF

Part No IRFS3207PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 170A D2PAK
Datasheet
IRFS3207PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 260nC @ 10V
Max Input Capacitance 7600pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205394-IRFS3207PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS3207PBF CAD Model

Description

The Infineon Technologies IRFS3207PBF is a N-Channel MOSFET that offers a drain-source breakdown voltage of 75V and a continuous drain current of 170A at 25°C.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 170A @ 25°C
  • Maximum Rds On: 4.5 mOhm @ 75A and 10V
  • Package: D2PAK package
  • Power Dissipation: 300W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)

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80+ $1.8926 $151.4080
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185+ $1.6279 $301.1615
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