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Same model may have multiple batches, images only for reference.
RSD175N10TL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RSD175N10TL

Part No RSD175N10TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 17.5A CPT3
Datasheet
RSD175N10TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 17.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 950pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 105 mOhm @ 8.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CPT3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 108359-RSD175N10TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSD175N10TL CAD Model

Description

The RSD175N10TL is an N-channel MOSFET from Rohm Semiconductor.

  • Category: discrete semiconductor products
  • Compliance: halogen-free regulations
  • Estimated EOL date: 2029
  • Supply and demand status: balanced
  • Maximum power dissipation: 20W
  • Drain-source breakdown voltage: 100V

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