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Same model may have multiple batches, images only for reference.
RSS065N03FU6TB Real Image
Same model may have multiple batches, images only for reference.

RSS065N03FU6TB

Part No RSS065N03FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.5A 8SOIC
Datasheet
RSS065N03FU6TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 6.1nC @ 5V
Max Input Capacitance 430pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 26 mOhm @ 6.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 046398-RSS065N03FU6TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSS065N03FU6TB CAD Model

Description

The RSS065N03FU6TB is an N-channel MOSFET from Rohm Semiconductor, designed to provide a reliable and efficient power switching solution for electronic devices.

  • Maximum Power Dissipation: 2W (Ta)
  • Package: 8-SOP
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Maximum Gate-Source Voltage: ±20V
  • Popularity: Medium
  • Supply and Demand Status: balanced
  • Description: This MOSFET is a reliable and efficient choice for power switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.6452 $60.5164
17+ $7.0929 $120.5793
26+ $6.8711 $178.6486
35+ $6.6493 $232.7255
45+ $6.4287 $289.2915
61+ $5.7635 $351.5735
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Availability: 5,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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